In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors

被引：16

作者：

Martin-Gonthier, Philippe ^{[1
]}

Goiffon, Vincent ^{[1
]}

Magnan, Pierre ^{[1
]}

机构：

[1] Univ Toulouse, Inst Super Aeronaut & Espace, CIMI Integrated Image Sensor Lab, F-31055 Toulouse, France

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2012年 / 59卷 / 06期

关键词：

Active-pixel sensor; CMOS image sensors (CISs); correlated double sampling (CDS); ionizing radiation; low-frequency noise (LFN); noisy pixels; random telegraph signal (RTS) noise; RANDOM TELEGRAPH SIGNAL; 1/F NOISE; ARCHITECTURE; SENSITIVITY;

D O I：

10.1109/TED.2012.2189115

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-mu m CMOS image sensor process. The noise measurements are focused on the random telegraph signal (RTS) noise due to the in-pixel source follower transistor of the sensor readout chain inducing noisy pixels. Results show no significant RTS noise degradation up to 300 krad of TID. Beyond this TID step, a limited RTS noise degradation is observed, and for the 2.19-Mrad step, an additional increase of total noise, including thermal, 1/f, and RTS noises, is noted. Noisy pixels have been studied for high TIDs, and three cases have been observed: 1) no change on RTS behavior; 2) creation of RTS behavior; and 3) modifications of RTS behavior.

引用

页码：1686 / 1692

页数：7

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