Characterization of low temperature p-type hydrogenated microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition

被引：0

作者：

Tse, W. F. L. ^{[1
]}

Khodami, I. ^{[1
]}

Adachi, M. M. ^{[1
]}

Wang, X. ^{[1
]}

Kavanagh, K. ^{[2
]}

Karim, K. S. ^{[1
]}

机构：

[1] Simon Fraser Univ, Sch Engn Sci, Burnaby, BC V5A 1S6, Canada

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

2007 CANADIAN CONFERENCE ON ELECTRICAL AND COMPUTER ENGINEERING, VOLS 1-3 | 2007年

关键词：

plasma enhanced chemical vapor deposition; p-type; hydrogenated; microcrystalline; silicon; dark conductivity; activation energy; Tauc optical bandgap; Raman spectroscopy; X-ray diffraction;

D O I：

暂无

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

P-type hydrogenated microcrystalline silicon (mu c-Si:H) thin films (similar to 100 nm) were deposited using plasma enhanced chemical vapor deposition (PECVD) at a substrate temperature of 150 degrees C. RF power density and pressure were varied among films. These films reach a dark conductivity (sigma(d)) of 10(-1) S/cm, activation energy (E-a) of 10(-2) eV and crystalline volume fraction (X-c) of > 50%. The structure of these films is composed of nano-sized crystallites embedded in an amorphous matrix, resulting in wide optical bandgap energies (E-opt). Using the Scherrer's formula, grain sizes were estimated to be < 20 nm.

引用

页码：952 / 955

页数：4

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