Suppression of sublinearity of light-current curve in 850 nm quantum well laser with asymmetric barrier layers

被引：11

作者：

Zubov, F. I. ^{[1
]}

Maximov, M. V. ^{[1
,5
]}

Shernyakov, Yu. M. ^{[2
]}

Kryzhanovskaya, N. V. ^{[1
]}

Semenova, E. S. ^{[3
]}

Yvind, K. ^{[3
]}

Asryan, L. V. ^{[4
]}

Zhukov, A. E. ^{[1
,5
]}

机构：

[1] St Petersburg Acad Univ, St Petersburg 194021, Russia

[2] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Tech Univ Denmark, DTU Foton, DK-2800 Lyngby, Denmark

[4] Virginia Polytech Inst & State Univ, Blacksburg, VA 24061 USA

[5] Peter Great St Petersburg Polytech Univ, St Petersburg, Russia

来源：

ELECTRONICS LETTERS | 2015年 / 51卷 / 14期

基金：

俄罗斯科学基金会;

关键词：

quantum well lasers; aluminium compounds; gallium arsenide; III-V semiconductors; gallium compounds; indium compounds; laser beams; current density; spontaneous emission; sublinearity suppression; light-current curve; quantum well laser; asymmetric barrier layers; light-current characteristic; current densities; maximum lasing power; catastrophic optical mirror damage; parasitic recombination; optical confinement layer; wavelength; 850; nm; power; 9; 2; W; AlGaAs-GaAs; GaInP; AlGaInAs; HETEROSTRUCTURE; 1.3-MU-M;

D O I：

10.1049/el.2015.1392

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An AlGaAs/GaAs quantum well (QW) laser is fabricated with GaInP and AlGaInAs asymmetric barrier layers (ABLs) and its light-current characteristic (LCC) is compared with that of a reference conventional QW laser without ABLs. It was found that the use of the ABLs suppresses the sublinearity of the LCC at high current densities. As a result, the maximum lasing power of 9.2 W, being limited by catastrophic optical mirror damage, is achieved at a considerably lower operating current in the laser with ABLs as compared to the reference laser (12.5 against 20.2 A). The ABL effect is associated with the suppression of the parasitic recombination in the optical confinement layer, as confirmed by a decrease of the intensity of the spontaneous emission from the layer.

引用

页码：1106 / 1107

页数：2

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