Electrical and optical properties of In2O3 nanoparticles prepared by MOCVD

被引：0

作者：

Wang, Ch. Y. ^{[1
]}

Cimalla, V. ^{[1
]}

Kups, Th. ^{[1
]}

Ambacher, O. ^{[1
]}

Himmerlich, M. ^{[2
]}

Krischok, S. ^{[2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany

[2] Tech Univ Ilmenau, Inst Micro & Nanotechnol, Ilmenau 98684, Germany

来源：

2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | 2008年

关键词：

D O I：

10.1109/INEC.2008.4585534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High sensitive ozone sensors working at room temperature were demonstrated based on In2O3 nanoparticles, which were deposited by metal organic chemical vapor deposition (MOCVD). The resistance of the In2O3 particle containing layer can be toned over five orders of magnitude after ultraviolet light illumination and oxidation by ozone containing gases. To investigate the light Induced effect on In2O3 layer, In2O3 nanoparticles were deposited at different substrate temperatures by MOCVD and the electrical and optical properties of the layers were analyzed. It was found that the layers deposited above 220 degrees C showed a typical linear I-V behavior while the layers grown below 220 degrees C revealed a classical Schottky behavior. Furthermore, the In2O3 layers deposited below the critical temperature demonstrated not only an Increasing absorption at 3.7 eV, which is the optical band gap of In2O3 thin films, but also two additional absorption peaks located at similar to 4.3 and similar to 5.3 eV, respectively. These differences in structural, electrical and optical properties of In2O3 layers lead to different ozone sensing properties.

引用

页码：489 / +

页数：2

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