A 3.2 ppm/°C curvature-compensated bandgap reference with wide supply voltage range

被引：8

作者：

Zhou, Ze-Kun ^{[1
]}

Ou, Xue-Chun ^{[1
]}

Shi, Yue ^{[2
]}

Zhu, Pei-Sheng ^{[1
]}

Ma, Ying-Qian ^{[1
]}

Qiu, Shi ^{[1
]}

Ming, Xin ^{[1
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

[2] Chengdu Univ Informat Technol, Coll Commun Engn, Chengdu 610225, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2012年 / 43卷 / 11期

关键词：

Feedback loop; High-order curvature compensation; PSRR without filtering capacitors; Temperature coefficient; Translinear loop circuit; REFERENCE CIRCUIT; TEMPERATURE-DEPENDENCE;

D O I：

10.1016/j.mejo.2012.06.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel bandgap reference (BGR) with low temperature and supply sensitivities, which is compatible with standard Bipolar and BiCMOS processes, is presented in this paper. Utilizing exponential curvature compensation (ECC) and translinear loop circuit (TLC), high-order curvature compensation is realized to reduce temperature drift. Besides, two feedback loops are embedded in the circuit to enhance the stability and to reduce the dependence on supply voltage. Experimental results of the proposed BGR implemented with 1-mu m Bipolar process demonstrate that a temperature coefficient (TC) of 3.2 ppm/degrees C is realized, a power supply rejection ratio (PSRR) of 60 dB is achieved without filtering capacitors, and the line regulation is better than 0.088 mV/V from 3.5 V to 30 V supply voltage dissipating a maximum supply current of 39 mu A. The active area of the proposed BGR is 700 mu m x 750 mu m. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：863 / 868

页数：6

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