Colloidal quantum dots for thermal infrared sensing and imaging

被引:75
作者
Bin Hafiz, Shihab [1 ]
Scimeca, Michael [2 ]
Sahu, Ayaskanta [2 ]
Ko, Dong-Kyun [1 ]
机构
[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA
[2] NYU, Dept Chem & Biomol Engn, Brooklyn, NY 11201 USA
基金
美国国家科学基金会;
关键词
Colloidal quantum dots; Optoelectronics; Thermal infrared; Photodetectors; AUGER RECOMBINATION; HGTE NANOCRYSTALS; PHOTODETECTORS; PHOTODIODES; TRANSISTORS; DETECTORS; MOBILITY; DEVICES; MWIR; SE;
D O I
10.1186/s40580-019-0178-1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Colloidal quantum dots provide a powerful materials platform to engineer optoelectronics devices, opening up new opportunities in the thermal infrared spectral regions where no other solution-processed material options exist. This mini-review collates recent research reports that push the technological envelope of colloidal quantum dot-based photodetectors toward mid- and long-wavelength infrared. We survey the synthesis and characterization of various thermal infrared colloidal quantum dots reported to date, discuss the basic theory of device operation, review the fabrication and measurement of photodetectors, and conclude with the future prospect of this emerging technology.
引用
收藏
页数:22
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