Epitaxial Ge2Sb2Te5 probed by single cycle THz pulses of coherent synchrotron radiation

被引：7

作者：

Bragaglia, V. ^{[1
]}

Schnegg, A. ^{[2
]}

Calarco, R. ^{[1
]}

Holldack, K. ^{[3
]}

机构：

[1] Paul Drude Inst Festkorperelekt, Hausvogteipl 5-7, D-10117 Berlin, Germany

[2] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Nanospectroscopy, Kekulestr 5, D-12489 Berlin, Germany

[3] Helmholtz Zentrum Berlin Mat & Energie GmbH, Inst Methods & Instrumentat Synchrotron Radiat Re, Albert Einstein Str 15, D-12489 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2016年 / 109卷 / 14期

关键词：

PHASE-CHANGE MATERIALS; MEMORIES; METAL;

D O I：

10.1063/1.4963889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A THz-probe spectroscopy scheme with laser-induced single cycle pulses of coherent synchrotron radiation is devised and adapted to reveal the dynamic THz transmittance response in epitaxially grown phase change materials upon 800 nm fs-laser excitation. Amorphous (a-) and crystalline (c-) films of the prototypical Ge2Sb2Te5 (GST) alloy are probed with single cycle THz pulses tuned to the spectral range of the highest absorption contrast at 2 THz. After an initial instantaneous sub-picosecond (ps) dynamic THz transmittance drop, the response of a-GST in that range is dominated only by a short recovery time tau(short) = 2 ps of the excited carriers. On the contrary, the behavior of the c-GST response displays a short decay of 0.85 ps followed by a long one tau(long) = 90 ps, suggesting that vacancy layers in an ordered c-GST play a role as dissipation channel for photo-induced free carriers. Published by AIP Publishing.

引用

页数：4

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