Strong Mid-Infrared Absorption and High Crystallinity of Microstructured Silicon Formed by Femtosecond Laser Irradiation in NF3 Atmosphere

被引：33

作者：

Dong, Xiao ^{[1
]}

Li, Ning ^{[2
,3
]}

Liang, Cong ^{[2
,3
]}

Sun, Haibin ^{[2
,3
]}

Feng, Guojin ^{[4
]}

Zhu, Zhen ^{[1
]}

Shao, Hezhu ^{[1
]}

Rong, Ximing ^{[1
]}

Zhao, Li ^{[2
,3
]}

Zhuang, Jun ^{[1
]}

机构：

[1] Fudan Univ, Dept Opt Sci & Engn, Shanghai Ultra Precis Opt Mfg Engn Ctr, Shanghai 200433, Peoples R China

[2] Fudan Univ, State Key Lab Surface Phys, Shanghai 200433, Peoples R China

[3] Fudan Univ, Dept Phys, Shanghai 200433, Peoples R China

[4] Natl Inst Metrol, Spectrophotometry Lab, Beijing 100013, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 08期

关键词：

INFRARED-ABSORPTION; OPTICAL-PROPERTIES;

D O I：

10.7567/APEX.6.081301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Arrays of high-quality crystalline conical spikes were formed on silicon surface in the presence of NF3 with femtosecond laser irradiation. The surface of the structures is smooth, and Raman scattering spectroscopy shows that few silicon polymorphs such as a-Si, Si-XII, and Si-III were observed in the conical structures. In the mid-infrared wavelength range of 3-16 mu m, the structured surface exhibits a high absorptance up to 0.8. Additionally, the absorptance of the sample remains almost unchanged after the annealing process. These properties of the structured silicon will make it a promising material for mid-infrared applications in optoelectronic fields. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

共 20 条

[1] Lifetime recovery in ultrahighly titanium-doped silicon for the implementation of an intermediate band material [J].

Antolin, E. ;

Marti, A. ;

Olea, J. ;

Pastor, D. ;

Gonzalez-Diaz, G. ;

Martil, I. ;

Luque, A. .

APPLIED PHYSICS LETTERS, 2009, 94 (04)

[2] Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes [J].

Carey, JE ;

Crouch, CH ;

Shen, MY ;

Mazur, E .

OPTICS LETTERS, 2005, 30 (14) :1773-1775

[3] Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation [J].

Crouch, CH ;

Carey, JE ;

Shen, M ;

Mazur, E ;

Génin, FY .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2004, 79 (07) :1635-1641

[4] Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon [J].

Crouch, CH ;

Carey, JE ;

Warrender, JM ;

Aziz, MJ ;

Mazur, E ;

Génin, FY .

APPLIED PHYSICS LETTERS, 2004, 84 (11) :1850-1852

[5] Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin [J].

Ertekin, Elif ;

Winkler, Mark T. ;

Recht, Daniel ;

Said, Aurore J. ;

Aziz, Michael J. ;

Buonassisi, Tonio ;

Grossman, Jeffrey C. .

PHYSICAL REVIEW LETTERS, 2012, 108 (02)

[6] Broad band enhanced infrared light absorption of a femtosecond laser microstructured silicon [J].

Liu, Y. ;

Liu, S. ;

Wang, Y. ;

Feng, G. ;

Zhu, J. ;

Zhao, L. .

LASER PHYSICS, 2008, 18 (10) :1148-1152

[7] Sulfur point defects in crystalline and amorphous silicon [J].

Mo, Y ;

Bazant, MZ ;

Kaxiras, E .

PHYSICAL REVIEW B, 2004, 70 (20) :205210-1

[8] High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon [J].

Schade, M. ;

Varlamova, O. ;

Reif, J. ;

Blumtritt, H. ;

Erfurth, W. ;

Leipner, H. S. .

ANALYTICAL AND BIOANALYTICAL CHEMISTRY, 2010, 396 (05) :1905-1911

[9] Physical mechanisms for the unique optical properties of chalcogen-hyperdoped silicon [J].

Shao, Hezhu ;

Li, Yuan ;

Zhang, Jinhu ;

Ning, Bo-Yuan ;

Zhang, Wenxian ;

Ning, Xi-Jing ;

Zhao, Li ;

Zhuang, Jun .

EPL, 2012, 99 (04)

[10] Role of the background gas in the morphology and optical properties of laser-microstructured silicon [J].

Sheehy, MA ;

Winston, L ;

Carey, JE ;

Friend, CA ;

Mazur, E .

CHEMISTRY OF MATERIALS, 2005, 17 (14) :3582-3586

← 1 2 →