Modelocked quantum dot vertical external cavity surface emitting laser

被引：22

作者：

Hoffmann, M. ^{[1
]}

Barbarin, Y. ^{[1
]}

Maas, D. J. H. C. ^{[1
]}

Golling, M. ^{[1
]}

Krestnikov, I. L. ^{[2
]}

Mikhrin, S. S. ^{[2
]}

Kovsh, A. R. ^{[2
]}

Suedmeyer, T. ^{[1
]}

Keller, U. ^{[1
]}

机构：

[1] ETH, Dept Phys, CH-8093 Zurich, Switzerland

[2] Innolume GmbH, D-44263 Dortmund, Germany

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2008年 / 93卷 / 04期

关键词：

42; 55; Px; 60; Fc;

D O I：

10.1007/s00340-008-3267-0

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the first successful modelocking of a vertical external cavity surface emitting laser (VECSEL) with a quantum dot (QD) gain region. The VECSEL has a total of 35 QD-layers with an emission wavelength of about 1060 nm. In SESAM modelocked operation, we obtain an average output power of 27.4 mW with 18-ps pulses at a repetition rate of 2.57 GHz. This QD-VECSEL is used as-grown on a 450 mu m thick substrate, which limits the average output power.

引用

收藏

页码：733 / 736

页数：4

相关论文

共 23 条

[1] 2.1-W picosecond passively mode-locked external-cavity semiconductor laser [J].

Aschwanden, A ;

Lorenser, D ;

Unold, HJ ;

Paschotta, R ;

Gini, E ;

Keller, U .

OPTICS LETTERS, 2005, 30 (03) :272-274

[2] CONTINUOUS-WAVE MODE-LOCKED SOLID-STATE LASERS WITH ENHANCED SPATIAL HOLE-BURNING .1. EXPERIMENTS [J].

BRAUN, B ;

WEINGARTEN, KJ ;

KARTNER, FX ;

KELLER, U .

APPLIED PHYSICS B-LASERS AND OPTICS, 1995, 61 (05) :429-437

[3] High power optically pumped semiconductor lasers. [J].

Chilla, J ;

Butterworth, S ;

Zeitschel, A ;

Charles, J ;

Caprara, A ;

Reed, M ;

Spinelli, L .

SOLID STATE LASERS XIII: TECHNOLOGY AND DEVICES, 2004, 5332 :143-150

[4] High-power semiconductor disk laser based on InAs/GaAs submonolayer quantum dots [J].

Germann, T. D. ;

Strittmatter, A. ;

Pohl, J. ;

Pohl, U. W. ;

Bimberg, D. ;

Rautiainen, J. ;

Guina, M. ;

Okhotnikov, O. G. .

APPLIED PHYSICS LETTERS, 2008, 92 (10)

[5] Temperature-stable operation of a quantum dot semiconductor disk laser [J].

Germann, T. D. ;

Strittmatter, A. ;

Pohl, J. ;

Pohl, U. W. ;

Bimberg, D. ;

Rautiainen, J. ;

Guina, M. ;

Okhotnikov, O. G. .

APPLIED PHYSICS LETTERS, 2008, 93 (05)

[6]

Grundmann M, 2000, PHYS STATUS SOLIDI A, V178, P255, DOI 10.1002/1521-396X(200003)178:1<255::AID-PSSA255>3.0.CO

[7]

2-Q

[8]

Haiml M, 2004, APPL PHYS B-LASERS O, V79, P331, DOI [10.1007/s00340-004-1535-1, 10.1007/S00340-004-1535-1]

[9] High-power passively mode-locked semiconductor lasers [J].

Häring, R ;

Paschotta, R ;

Aschwanden, A ;

Gini, E ;

Morier-Genoud, F ;

Keller, U .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) :1268-1275

[10] Emission spectra and mode structure of InAs/GaAs self-organized quantum dot lasers [J].

Harris, L ;

Mowbray, DJ ;

Skolnick, MS ;

Hopkinson, M ;

Hill, G .

APPLIED PHYSICS LETTERS, 1998, 73 (07) :969-971