Domain wall anisotropic magnetoresistance in planar nanowires

被引：27
作者：
Bogart, L. K. [1 ]
Atkinson, D. [1 ]
机构：
[1] Univ Durham, Dept Phys, Durham DH1 3LE, England
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 04期
关键词：
enhanced magnetoresistance; magnetic domain walls; micromagnetics; nanowires; THIN-FILMS; RESISTIVITY; DEPENDENCE; RESISTANCE; THICKNESS;
D O I：
10.1063/1.3077174
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The anisotropic magnetoresistance (AMR) of individual magnetic domain walls in planar nanowires has been systematically investigated as a function of the micromagnetic wall structure, width, and thickness of the nanowire. Experimentally derived thickness dependence of both the thin film resistivity and the anisotropic magnetoresistance were incorporated into the calculations. We found that the AMR value can be used to identify the wall structure and that the wall resistance is sensitive to wire width for widths less than 300 nm. Furthermore, in comparison with the detailed analysis here, a previous simplified domain wall model significantly underestimates domain wall resistance in narrower wires.
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