2D numerical simulation of a-Si:H TFTS: Application to parasitic contact resistances evaluation

In this paper, we present a 2D numerical computer program for amorphous silicon thin film transistors (a-Si:H TFTs) simulation, and its application to the bidimensional study of the parasitic channel access resistances. The program solves the transport equation set under nonequilibrium steady state conditions, for given applied voltages. The values of physical parameters describing the internal state of the transistor are calculated at each node of a bidimensionnal mesh and the resulting drain current can therefore be related to the physical characteristics of the materials and to the geometrical and technological parameters of the device. The program allowed us to perform the evaluation of parasitic channel access resistances and their sensitivity to physical and geometrical parameters. (C) 1997 Elsevier Science S.A.