The experimental-numerical investigation of instability of faceted Ge doped by Sb growth on the base of AHP method

被引：9

作者：

Bykova, Sveta V. ^{[1
]}

Golyshev, Vladimir D. ^{[1
]}

Gonik, Michael A. ^{[1
]}

Tsvetovsky, Vladimir B. ^{[1
]}

Balikci, Ercan ^{[2
]}

Deal, Andrew ^{[2
]}

Abbaschian, Reza ^{[2
]}

Marchenko, Marina P. ^{[3
]}

Frjazinov, Igor. V. ^{[3
]}

Vlasov, Vladimir N. ^{[4
]}

Serebrjakov, Jury A. ^{[4
]}

机构：

[1] Ctr Thermophys Res Thermo, Aleksandrov 601655, Russia

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[3] Russian Acad Sci, Inst Math Modelling, Moscow, Russia

[4] RAS, Space Mat Sci Res Ctr, Inst Crystallog, Kaluga, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 275卷 / 1-2期

关键词：

Computer simulation; Convection; Crystal morphology; Growth from melt; Semiconducting germanium;

D O I：

10.1016/j.jcrysgro.2004.11.034

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An antimony-doped germanium single crystal was grown by the Axial Heat Processing (AHP) method from the melt to study the influence of facets on the morphological stability of a solid/liquid interface. It is shown that the faceted portion of the interface remains more stable than the non-faceted portion. In addition, instability of the faceted region occurs at a higher solute concentration with larger cell spacing. A mathematical model, accounting for the presence of facet, predicted the solute profile and morphological features of the grown crystal are in good agreement with the experimental data. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：E229 / E236

页数：8

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