Electron-longitudinal optical phonon interaction between Landau levels in semiconductor heterostructures

被引:32
作者
Becker, C
Vasanelli, A
Sirtori, C
Bastard, G
机构
[1] Univ Paris 07, Lab Mat & Phenomenes Quant, F-75005 Paris, France
[2] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France
关键词
D O I
10.1103/PhysRevB.69.115328
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Calculations of electron-longitudinal optical phonon scattering rates between Landau levels in semiconductor heterostructures with a magnetic field applied parallel to the direction of confinement are reported. We have found that the scattering rate shows strong oscillations as a function of the applied field, depending on the configuration of the energy states in the structure. In the limit B-->0, the expressions for the intersubband scattering rate between Landau levels reduce to those obtained in the case of two-dimensional subbands at B=0 T.
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页数:6
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