Effective Creation of Spin Polarization in p-Type Ge from a Fe/GeO2 Tunnel Contact

被引：9
作者：
Spiesser, Aurelie [1 ]
Watanabe, Suguru [1 ,2 ]
Saito, Hidekazu [1 ]
Yuasa, Shinji [1 ]
Ando, Koji [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Spintron Res Ctr, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Tsukuba, Tsukuba, Ibaraki 3058571, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 04期
基金：
日本学术振兴会;
关键词：
SILICON; INJECTION;
D O I：
10.7567/JJAP.52.04CM01
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We examined electrical creation of spin-polarized carriers in heavily doped p-type Ge from a Fe/GeO2 tunnel contact where GeO2 is an amorphous insulator. Clear spin accumulation signals were successfully observed up to 300 K down to a very low voltage of 1 mV. In contrast to epitaxial Fe/MgO tunnel contact, the magnitude of spin accumulation signal exhibits a nearly symmetric behavior with respect to the bias voltage polarity. These results establish that GeO2 is an effective tunnel barrier for spin injection and detection in germanium. (C) 2013 The Japan Society of Applied Physics
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页数：4
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