Preparation of nanosized La0.7Sr0.3MnO3/Pr0.5Sr0.5MnO3 composites with enhanced low-field magnetoresistance

被引：7
作者：
Yuan, GL
Liu, JM [1 ]
Liu, ZG
Du, YW
Chan, HLW
Choy, CL
机构：
[1] Nanjing Univ, Solid State Microstruct Lab, Nanjing 210093, Peoples R China
[2] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China
[3] Huazhong Univ Sci & Technol, Lab Laser Technol, Wuhan, Peoples R China
[4] Chinese Acad Sci, Int Ctr Mat Sci, Shenyang 110016, Peoples R China
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2002年 / 75卷 / 1-3期
关键词：
low-field magnetoresistance; perovskite manganites; composites;
D O I：
10.1016/S0254-0584(02)00047-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanosized La0.7Sr0.3MnO3/Pr0.5Sr0.5MnO3 (LSMO1-xPSMOx) ceramic composites are prepared by solid-state co-sintering of ultrafine ferromagnetic LSMO and anti -ferro magnetic PSMO powders. The n-ftrostructural, electro- and magneto-transport properties of the composites are characterized. Both the anti-ferromagnetic/ferromagnetic coupling between PSMO/LSMO phases at low temperature and ferromagnetic ordering of PSMO at high temperature make a contribution to the enhanced low-field magnetoresistance. This effect decays more slowly than that for pure LSMO with increasing temperature up to 250 K. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：161 / 165
页数：5
相关论文
共 14 条
[1]   Enhanced field sensitivity close to percolation in magnetoresistive La2/3Sr1/3MnO3/CeO2 composites [J].
Balcells, L ;
Carrillo, AE ;
Martínez, B ;
Fontcuberta, J .
APPLIED PHYSICS LETTERS, 1999, 74 (26) :4014-4016
[2]  
de Andrés A, 1999, APPL PHYS LETT, V74, P3884, DOI 10.1063/1.124212
[3]  
Gupta A, 1998, COLOSSAL MAGNETORESISTANCE, CHARGE ORDERING AND RELATED PROPERTIES OF MANGANESE OXIDES, P189
[4]   Spin-polarized intergrain tunneling in La-2/Sr-3(1)/3MnO3 [J].
Hwang, HY ;
Cheong, SW ;
Ong, NP ;
Batlogg, B .
PHYSICAL REVIEW LETTERS, 1996, 77 (10) :2041-2044
[5]   Intergrain magnetoresistance via second-order tunneling in perovskite manganites [J].
Lee, S ;
Hwang, HY ;
Shraiman, BI ;
Ratcliff, WD ;
Cheong, SW .
PHYSICAL REVIEW LETTERS, 1999, 82 (22) :4508-4511
[6]   Low-field magnetoresistive properties of polycrystalline and epitaxial perovskite manganite films [J].
Li, XW ;
Gupta, A ;
Xiao, G ;
Gong, GQ .
APPLIED PHYSICS LETTERS, 1997, 71 (08) :1124-1126
[7]   The large magnetoresistance property of La0.5Sr0.5CoO3-x thin films prepared by pulsed laser deposition position [J].
Liu, JM ;
Ong, CK .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1047-1049
[8]   Partially crystallized La0.5Sr0.5MnO3 thin films by laser ablation and their enhanced low-field magnetoresistance [J].
Liu, JM ;
Li, J ;
Huang, Q ;
You, LP ;
Wang, SJ ;
Ong, CK ;
Wu, ZC ;
Liu, ZG ;
Du, YW .
APPLIED PHYSICS LETTERS, 2000, 76 (16) :2286-2288
[9]   Large low-field magnetoresistance in La0.7Ca0.3MnO3 induced by artificial grain boundaries [J].
Mathur, ND ;
Burnell, G ;
Isaac, SP ;
Jackson, TJ ;
Teo, BS ;
MacManusDriscoll, JL ;
Cohen, LF ;
Evetts, JE ;
Blamire, MG .
NATURE, 1997, 387 (6630) :266-268
[10]   Electronic structure and half-metallic transport in the La1-xCaxMnO3 system [J].
Pickett, WE ;
Singh, DJ .
PHYSICAL REVIEW B, 1996, 53 (03) :1146-1160
12