Preparation and electrical properties of (Zr,Sn)TiO4 dielectric thin films by laser ablation

被引:0
|
作者
Nakagawara, O [1 ]
Tabata, H [1 ]
Toyota, Y [1 ]
Kobayashi, M [1 ]
Yoshino, Y [1 ]
Katayama, Y [1 ]
Kawai, T [1 ]
机构
[1] MURATA MFG CO LTD,KYOTO 617,JAPAN
来源
EPITAXIAL OXIDE THIN FILMS II | 1996年 / 401卷
关键词
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:97 / 102
页数:6
相关论文
共 50 条
  • [21] (Zr,Sn)TiO4微波介质陶瓷
    汤炳谦
    陈以钢
    郁志军
    固体电子学研究与进展, 1985, (02) : 183 - 183
  • [22] Effect of Sintering Methods on Properties of (Zr0.8Sn0.2)TiO4(ZST) Dielectric Ceramics
    Yang Xuejiao
    Li Yuping
    Gao Pengzhao
    Li Rongzheng
    Chen Gongtian
    RARE METAL MATERIALS AND ENGINEERING, 2009, 38 : 659 - 662
  • [23] MICROWAVE DIELECTRIC-PROPERTIES OF (ZR0.8SN0.2)TIO4 CERAMICS WITH PENTAVALENT ADDITIVES
    YOON, KH
    KIM, YS
    KIM, ES
    JOURNAL OF MATERIALS RESEARCH, 1995, 10 (08) : 2085 - 2090
  • [24] Synthesis and low temperature densification of (Zr0.8Sn0.2)TiO4 ceramics with improved dielectric properties
    Liming Zhang
    Wenyuan Gong
    Miao Xin
    Yi Chang
    Xianfu Luo
    Hongqing Zhou
    Journal of Materials Science: Materials in Electronics, 2019, 30 : 5194 - 5202
  • [25] Effect of annealing treatments on the microstructure of (Zr0.8Sn0.2)TiO4 thin films sputtered on silicon
    Hsu, CH
    Huang, CL
    THIN SOLID FILMS, 2006, 498 (1-2) : 271 - 276
  • [26] Highly oriented (Zr0.7Sn0.3)TiO4 thin films grown by rf magnetron sputtering
    Wu, FJ
    Tseng, TY
    JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1998, 81 (02) : 439 - 443
  • [27] Fabrication of (Zr0.8Sn0.2)TiO4 dielectric resonators in arbitrary shapes
    Tumuluri, Anil
    Raju, R. Missak Swarup
    Raju, K. C. James
    Seshubai, V.
    Rajasekharan, T.
    MATERIALS LETTERS, 2015, 154 : 128 - 131
  • [28] The synthesis, characterization and properties of Hf-substituted (Zr0.8Sn0.2)TiO4 dielectric ceramics
    Sreemoolanadhan, H
    Ratheesh, R
    Sebastian, MT
    Rodrigues, N
    Philip, J
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1997, 30 (12) : 1809 - 1814
  • [29] Properties of preferential (Zr0.8,Sn0.2)TiO4 thin films prepared by rf magnetron sputtering for microwave application
    Cheng, WX
    Ding, AL
    Qiu, PS
    Zhang, Y
    He, XY
    Zheng, XS
    MICROELECTRONIC ENGINEERING, 2003, 66 (1-4) : 648 - 653
  • [30] Microwave dielectric properties of (Zr0.8Sn0.2)TiO4 ceramics doped with WO3
    Ahn, YS
    Yoon, KH
    Kim, ES
    FERROELECTRICS, 2001, 257 (1-4) : 123 - 128