Highly tunable-emittance radiator based on semiconductor-metal transition of VO2 thin films

被引：92

作者：

Hendaoui, Ali ^{[1
]}

Emond, Nicolas ^{[1
]}

Chaker, Mohamed ^{[1
]}

Haddad, Emile ^{[2
]}

机构：

[1] Univ Quebec, Inst Natl Rech Sci INRS, Varennes, PQ J3X 1S2, Canada

[2] MPB Commun Inc, Pointe Claire, PQ H9R 1E9, Canada

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 06期

关键词：

INSULATOR-TRANSITION; PHASE-TRANSITION; DEVICES;

D O I：

10.1063/1.4792277

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper describes a VO2-based smart structure with an emittance that increases with the temperature. A large tunability of the spectral emittance, which can be as high as 0.90, was achieved. The transition of the total emittance with the temperature was fully reversible according to a hysteresis cycle, with a transition temperature of 66.5 degrees C. The total emittance of the device was found to be 0.22 and 0.71 at 25 degrees C and 100 degrees C, respectively. This emittance performance and the structure simplicity are promising for the next generation of energy-efficient cost-effective passive thermal control systems of spacecrafts. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792277]

引用

页数：4

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