Insulation degradation behavior of multilayer ceramic capacitors clarified by Kelvin probe force microscopy under ultra-high vacuum

被引:28
作者
Suzuki, Keigo [1 ]
Okamoto, Takafumi [1 ]
Kondo, Hiroyuki [1 ]
Tanaka, Nobuhiko [1 ]
Ando, Akira [1 ]
机构
[1] Murata Mfg Co Ltd, Nagaokakyo, Kyoto 6178555, Japan
关键词
DC-ELECTRICAL DEGRADATION; RESISTANCE DEGRADATION; DEFECT STRUCTURE; BARIUM-TITANATE; RARE-EARTH; BATIO3; MECHANISM; TRANSITION; ELECTRODES; TRANSPORT;
D O I
10.1063/1.4791714
中图分类号
O59 [应用物理学];
学科分类号
摘要
We investigated surface potential images on the cross section of degraded multilayer ceramic capacitors (MLCCs) by Kelvin probe force microscopy measured under a dc bias voltage in ultra-high vacuum. A highly accelerated lifetime test (HALT) was conducted to obtain degraded MLCCs. The high energy resolution of the present measurement allows us to observe the step-like voltage drops on dielectric layers of as-fired MLCCs. The step-like voltage drops disappear on the dielectric layers of degraded MLCCs, indicating that the resistance at grain boundaries declines with the progress of insulation degradation. Furthermore, the electric field concentrations near the electrodes are clearly observed under forward and backward bias. The discussion based on energy band diagrams suggests that the electric field concentrations near electrodes are attributable to energy barrier formed at the interface between electrode and dielectrics. In particular, the electric field concentration at cathode in HALT measured under backward bias is much higher than that at anode in HALT measured under forward bias. This implies that oxygen vacancies accumulated during HALT cause band bending near the cathode in HALT. We propose that the initial decline of resistance at grain boundaries and following electric-field concentrations at anode in HALT is essential to the insulation degradation on dielectric layers of MLCCs under dc bias voltage. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4791714]
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页数:7
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共 30 条
[1]   DC ELECTRICAL DEGRADATION OF PEROVSKITE-TYPE TITANATES .3. A MODEL OF THE MECHANISM [J].
BAIATU, T ;
WASER, R ;
HARDTL, KH .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (06) :1663-1673
[2]   Relationship between wetting and electrical contact properties of pure metals and alloys on semiconducting barium titanate ceramics [J].
Cann, DP ;
Maria, JP ;
Randall, CA .
JOURNAL OF MATERIALS SCIENCE, 2001, 36 (20) :4969-4976
[3]   NON-STOICHIOMETRY IN UNDOPED BATIO3 [J].
CHAN, NH ;
SHARMA, RK ;
SMYTH, DM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (09) :556-562
[4]   Dc-electrical degradation of the BT-based material for multilayer ceramic capacitor with Ni internal electrode: Impedance analysis and microstructure [J].
Chazono, H ;
Kishi, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (9B) :5624-5629
[5]   OPTICAL PROPERTIES OF PEROVSKITE OXIDES IN THEIR PARAELECTRIC AND FERROELECTRIC PHASES [J].
DIDOMENICO, M ;
WEMPLE, SH .
PHYSICAL REVIEW, 1968, 166 (02) :565-+
[6]   FATIGUE AND SWITCHING IN FERROELECTRIC MEMORIES - THEORY AND EXPERIMENT [J].
DUIKER, HM ;
BEALE, PD ;
SCOTT, JF ;
DEARAUJO, CAP ;
MELNICK, BM ;
CUCHIARO, JD ;
MCMILLAN, LD .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (11) :5783-5791
[7]   PHOTOELECTRIC WORK FUNCTIONS OF TRANSITION, RARE-EARTH, AND NOBLE METALS [J].
EASTMAN, DE .
PHYSICAL REVIEW B, 1970, 2 (01) :1-&
[8]   Advances in atomic force microscopy [J].
Giessibl, FJ .
REVIEWS OF MODERN PHYSICS, 2003, 75 (03) :949-983
[9]   Kelvin probe force microscopy study of surface potential transients in cleaved AlGaN/GaN high electron mobility transistors [J].
Kamiya, S. ;
Iwami, M. ;
Tsuchiya, T. ;
Kurouchi, M. ;
Kikawa, J. ;
Yamada, T. ;
Wakejima, A. ;
Miyamoto, H. ;
Suzuki, A. ;
Hinoki, A. ;
Araki, T. ;
Nanishi, Y. .
APPLIED PHYSICS LETTERS, 2007, 90 (21)
[10]   SILICON PN JUNCTION IMAGING AND CHARACTERIZATIONS USING SENSITIVITY ENHANCED KELVIN PROBE FORCE MICROSCOPY [J].
KIKUKAWA, A ;
HOSAKA, S ;
IMURA, R .
APPLIED PHYSICS LETTERS, 1995, 66 (25) :3510-3512