Comprehensive Study of Au Nano-Mesh as a Catalyst in the Fabrication of Silicon Nanowires Arrays by Metal-Assisted Chemical Etching

被引:13
作者
Wang, Shanshan [1 ]
Liu, Huan [1 ]
Han, Jun [1 ]
机构
[1] Xian Technol Univ, Sch Optoelect Engn, Xian 710021, Shaanxi, Peoples R China
来源
COATINGS | 2019年 / 9卷 / 02期
关键词
SiNWs; MACE; AAO; anti-reflection performance; synthesized nanostructure arrays; SI NANOWIRES; GROWTH; DIAMETER; SCALE;
D O I
10.3390/coatings9020149
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon nanowires (SiNWs) arrays have become one of low-dimensional structural nanomaterials for the preparation of high-performance optoelectronic devices with the advantages of highly efficient light trapping effect, carrier multiplication, and adjustable optical bandgap. The controlled growth of SiNWs determines their electrical and optical properties. The morphology of silicon nanowires fabricated by conventional metal-assisted chemical etching (MACE) involving the Ag-based etching process cannot be precisely controlled. Ultra-thin anodic aluminum oxide (AAO) is one of the new-pattern nanostructure assembly systems for the synthesis of nanomaterials. The synthesized nanostructure arrays can be tuned to exhibit different optical and electrical properties in a certain wavelength range by adjusting the AAO membrane parameters. In this paper, we demonstrate an ultra-thin Au nano-meshes array from a single hexagonal AAO membrane as a replication master instead of conventional Ag particles as etching catalyst. The extended ordered silicon nanowires arrays are fabricated by the selective chemical dissolution of nanoscale noble metal meshes that exhibit excellent anti-reflection performance in broadband wavelengths and a wide incidence angle.
引用
收藏
页数:11
相关论文
共 44 条
  • [1] Atwater HA, 2010, NAT MATER, V9, P205, DOI [10.1038/NMAT2629, 10.1038/nmat2629]
  • [2] Morphological Control of Single-Crystalline Silicon Nanowire Arrays near Room Temperature
    Chen, Chia-Yun
    Wu, Chi-Sheng
    Chou, Chia-Jen
    Yen, Ta-Jen
    [J]. ADVANCED MATERIALS, 2008, 20 (20) : 3811 - +
  • [3] Preparation of thin porous silicon layers by stain etching
    DimovaMalinovska, D
    SendovaVassileva, M
    Tzenov, N
    Kamenova, M
    [J]. THIN SOLID FILMS, 1997, 297 (1-2) : 9 - 12
  • [4] Light Trapping in Silicon Nanowire Solar Cells
    Garnett, Erik
    Yang, Peidong
    [J]. NANO LETTERS, 2010, 10 (03) : 1082 - 1087
  • [5] Silicon nanowires grown on iron-patterned silicon substrates
    Gu, Q
    Dang, HY
    Cao, J
    Zhao, JH
    Fan, SS
    [J]. APPLIED PHYSICS LETTERS, 2000, 76 (21) : 3020 - 3021
  • [6] Solution-liquid-solid (SLS) growth of silicon nanowires
    Heitsch, Andrew T.
    Fanfair, Dayne D.
    Tuan, Hsing-Yu
    Korgel, Brian A.
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2008, 130 (16) : 5436 - +
  • [7] Control of thickness and orientation of solution-grown silicon nanowires
    Holmes, JD
    Johnston, KP
    Doty, RC
    Korgel, BA
    [J]. SCIENCE, 2000, 287 (5457) : 1471 - 1473
  • [8] Homma T., 2005, J MAGN SOC JPN, V29, P1035
  • [9] Metal-assisted electrochemical etching of silicon
    Huang, Z. P.
    Geyer, N.
    Liu, L. F.
    Li, M. Y.
    Zhong, P.
    [J]. NANOTECHNOLOGY, 2010, 21 (46)
  • [10] Extended arrays of vertically aligned sub-10 nm diameter [100] Si nanowires by metal-assisted chemical etching
    Huang, Zhipeng
    Zhang, Xuanxiong
    Reiche, Manfred
    Liu, Lifeng
    Lee, Woo
    Shimizu, Tomohiro
    Senz, Stephan
    Goesele, Ulrich
    [J]. NANO LETTERS, 2008, 8 (09) : 3046 - 3051