Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates

被引：11

作者：

Hsiao, Yu-Lin ^{[1
]}

Lu, Lung-Chi ^{[2
]}

Wu, Chia-Hsun ^{[1
]}

Chang, Edward Yi ^{[1
]}

Kuo, Chien-I ^{[1
]}

Maa, Jer-Shen ^{[3
]}

Lin, Kung-Liang ^{[1
]}

Luong, Tien-Tung ^{[1
]}

Huang, Wei-Ching ^{[1
]}

Chang, Chia-Hua ^{[1
]}

Dee, Chang Fu ^{[4
]}

Majlis, Burhanuddin Yeop ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Coll Engn, Degree Program Semicond Mat & Proc Equipment, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Coll Photon, Tainan 71150, Taiwan

[4] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Bangi 43600, Selangor, Malaysia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ALGAN BUFFER LAYERS; CRACK-FREE GAN; STRESS-RELAXATION; SI(111) SUBSTRATE; THICKNESS; SILICON; FILMS; EPITAXY;

D O I：

10.1143/JJAP.51.025505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

2.2-mu m-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded AlxGa1-xN layers. With the increase of the graded AlxGa1-xN layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-AlxGa1-xN layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1 x 1 cm(2) larger patterns, the device exhibits maximum drain current density of 776 mA/mm and maximum transconductance of 101 mS/mm. (c) 2012 The Japan Society of Applied Physics

引用

页数：4

共 30 条

[1] Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers
Able, A
Wegscheider, W
Engl, K
Zweck, J
[J]. JOURNAL OF CRYSTAL GROWTH, 2005, 276 (3-4) : 415 - 418
[2] [Anonymous], IEDM
[3] The origin of stress reduction by low-temperature AlN interlayers
Bläsing, J
Reiher, A
Dadgar, A
Diez, A
Krost, A
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (15) : 2722 - 2724
[4] Stress relaxation in the GaN/AlN multilayers grown on a mesh-patterned Si(111) substrate
Chen, CH
Yeh, CM
Hwang, J
Tsai, TL
Chiang, CH
Chang, CS
Chen, TP
[J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (09)
[5] High quality GaN grown on silicon(111) using a SixNy interlayer by metal-organic vapor phase epitaxy
Cheng, Kai
Leys, M.
Degroote, S.
Germain, M.
Borghs, G.
[J]. APPLIED PHYSICS LETTERS, 2008, 92 (19)
[6] Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate
Cong, GW
Lu, Y
Peng, WQ
Liu, XL
Wang, XH
Wang, ZG
[J]. JOURNAL OF CRYSTAL GROWTH, 2005, 276 (3-4) : 381 - 388
[7] Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1 μm in thickness
Dadgar, A
Bläsing, J
Diez, A
Alam, A
Heuken, M
Krost, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (11B): : L1183 - L1185
[8] Ikeda N, 2008, INT SYM POW SEMICOND, P287
[9] GaN Power Transistors on Si Substrates for Switching Applications
Ikeda, Nariaki
Niiyama, Yuki
Kambayashi, Hiroshi
Sato, Yoshihiro
Nomura, Takehiko
Kato, Sadahiro
Yoshida, Seikoh
[J]. PROCEEDINGS OF THE IEEE, 2010, 98 (07) : 1151 - 1161
[10] AlGaN/GaN heterostructure field-effect transistors (HFETs) on Si substrates for large-current operation
Iwakami, S
Yanagihara, M
Machida, O
Chino, E
Kaneko, N
Goto, H
Ohtsuka, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (7A): : L831 - L833

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