Effect of Graded AlxGa1-xN Layers on the Properties of GaN Grown on Patterned Si Substrates

被引：11

作者：

Hsiao, Yu-Lin ^{[1
]}

Lu, Lung-Chi ^{[2
]}

Wu, Chia-Hsun ^{[1
]}

Chang, Edward Yi ^{[1
]}

Kuo, Chien-I ^{[1
]}

Maa, Jer-Shen ^{[3
]}

Lin, Kung-Liang ^{[1
]}

Luong, Tien-Tung ^{[1
]}

Huang, Wei-Ching ^{[1
]}

Chang, Chia-Hua ^{[1
]}

Dee, Chang Fu ^{[4
]}

Majlis, Burhanuddin Yeop ^{[4
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Coll Engn, Degree Program Semicond Mat & Proc Equipment, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Lighting & Energy Photon, Coll Photon, Tainan 71150, Taiwan

[4] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Bangi 43600, Selangor, Malaysia

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 02期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ALGAN BUFFER LAYERS; CRACK-FREE GAN; STRESS-RELAXATION; SI(111) SUBSTRATE; THICKNESS; SILICON; FILMS; EPITAXY;

D O I：

10.1143/JJAP.51.025505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

2.2-mu m-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded AlxGa1-xN layers. With the increase of the graded AlxGa1-xN layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-AlxGa1-xN layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1 x 1 cm(2) larger patterns, the device exhibits maximum drain current density of 776 mA/mm and maximum transconductance of 101 mS/mm. (c) 2012 The Japan Society of Applied Physics

引用

页数：4

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