Defect Engineering Using Bilayer Structure in Filament-Type RRAM

被引：13

作者：

Lee, Daeseok ^{[1
]}

Woo, Jiyong ^{[1
]}

Cha, Euijun ^{[1
]}

Park, Sangsu ^{[2
]}

Lee, Sangheon ^{[1
]}

Park, Jaesung ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Gwangju Inst Sci & Technol, Kwangju 500712, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 10期

基金：

新加坡国家研究基金会;

关键词：

Bilayer; defect engineering; interface engineering; low-power operation; resistive random access memory (RRAM); MODEL;

D O I：

10.1109/LED.2013.2279009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To develop a low-power and stable resistive RAM, a defect engineering using bilayer structure is proposed. To control the amount of defect in switching layer, interfacial state between an oxygen absorption layer and switching layer is used. Therefore, in low-power operation, defect engineered sample demonstrated the proposed approach based on its improved ON/OFF ratio and stability.

引用

页码：1250 / 1252

页数：3

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