Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

被引：439

作者：

Liu, GT ^{[1
]}

Stintz, A ^{[1
]}

Li, H ^{[1
]}

Malloy, KJ ^{[1
]}

Lester, LF ^{[1
]}

机构：

[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 14期

关键词：

D O I：

10.1049/el:19990811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lowest room-temperature threshold current density, 26A/cm(2), of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In0.15Ga0.85As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 mu m.

引用

页码：1163 / 1165

页数：3

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