Micromachined silicon slits for beam-diagnostic in particle accelerators

被引：8

作者：

Cianci, E ^{[1
]}

Notargiacomo, A ^{[1
]}

Cianchi, A ^{[1
]}

Foglietti, V ^{[1
]}

机构：

[1] CNR, Ist Elett Stato Solido, I-00156 Rome, Italy

来源：

MICROMACHINING AND MICROFABRICATION PROCESS TECHNOLOGY VII | 2001年 / 4557卷

关键词：

high charge-density electron beams; diffraction radiation; non-intercepting device; silicon micromachining; wet anisotropic etching;

D O I：

10.1117/12.442951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication process of a silicon target with a rectangular slit as an instrument for measuring the size and the angular divergence of high charge-density electron beams in particles accelerators. Bulk micromachining of silicon wafers by means of anisotropic etching allowed the definition of slits with parallel straight edges and low disuniformity. The disuniformities of the completed device evaluated by scanning electron microscopy were found to be tolerable with respect to the wavelength used in the experiments. Tests of the fabricated targets are in progress in the injector of ELETTRA, the synchrotron radiation facility in Trieste, Italy.

引用

页码：242 / 249

页数：8

共 6 条

[1] A new non-intercepting beam size diagnostics using diffraction radiation from a slit [J].