Ni-decorated SiC powders: Enhanced high-temperature dielectric properties and microwave absorption performance

被引:74
作者
Yuan, Jie [1 ,2 ]
Yang, Hui-Jing [1 ]
Hou, Zhi-Ling [3 ]
Song, Wei-Li [1 ]
Xu, Hui [1 ]
Kang, Yu-Qing [1 ]
Jin, Hai-Bo [1 ]
Fang, Xiao-Yong [4 ]
Cao, Mao-Sheng [1 ]
机构
[1] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China
[2] Minzu Univ China, Sch Informat Engn, Beijing 100081, Peoples R China
[3] Beijing Univ Chem Technol, Sch Sci, Beijing 100029, Peoples R China
[4] Yanshan Univ, Sch Sci, Qinhuangdao 066004, Peoples R China
基金
中国国家自然科学基金;
关键词
Silicon carbide; Dielectric properties; Temperature-dependent characteristic; SILICON-CARBIDE; THERMAL-CONDUCTIVITY; COMPLEX PERMITTIVITY; ABSORBING PROPERTY;
D O I
10.1016/j.powtec.2012.12.020
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Ni-decorated SiC powders were fabricated by using an improved solution chemical method. The dielectric properties were investigated in the temperature range of 373-673 K at frequencies of 8.2-12.4 GHz (X-band). Compared to the naked SiC, the complex permittivity and loss tangent of Ni-decorated SiC are significantly improved in the frequency and temperature ranges investigated. Strong temperature-dependent loss tangent associated with the hopping conductance between Ni nanopartides in the modified layers is observed in the Ni-decorated SiC Calculation of the microwave absorption shows that much enhanced absorption performance can be observed in the Ni-decorated SiC. Increased microwave absorption coupled with widened effective absorption bandwidth demonstrates positive temperature effects on the absorption performance, indicating promising potential applications of high-temperature microwave absorption materials. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:309 / 313
页数:5
相关论文
共 30 条
  • [1] Influence of synthesis process on the dielectric properties of B-doped SiC powders
    Agathopoulos, Simeon
    [J]. CERAMICS INTERNATIONAL, 2012, 38 (04) : 3309 - 3315
  • [2] The effects of temperature and frequency on the dielectric properties, electromagnetic interference shielding and microwave-absorption of short carbon fiber/silica composites
    Cao, Mao-Sheng
    Song, Wei-Li
    Hou, Zhi-Ling
    Wen, Bo
    Yuan, Jie
    [J]. CARBON, 2010, 48 (03) : 788 - 796
  • [3] Devaty RP, 1997, PHYS STATUS SOLIDI A, V162, P5, DOI 10.1002/1521-396X(199707)162:1<5::AID-PSSA5>3.0.CO
  • [4] 2-J
  • [5] Microwave properties of semi-insulating silicon carbide between 10 and 40 GHz and at cryogenic temperatures
    Hartnett, John G.
    Mouneyrac, David
    Krupka, Jerzy
    le Floch, Jean-Michel
    Tobar, Michael E.
    Cros, Dominique
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (06)
  • [6] Microwave synthesis of Al-doped SiC powders and study of their dielectric properties
    Jin, Hai-bo
    Cao, Mao-sheng
    Zhou, Wei
    Agathopoulos, Simeon
    [J]. MATERIALS RESEARCH BULLETIN, 2010, 45 (02) : 247 - 250
  • [7] Jon A.S., 2007, PHYS REV LETT, V99, P07401
  • [8] Electronic conduction in polymers, carbon nanotubes and graphene
    Kaiser, Alan B.
    Skakalova, Viera
    [J]. CHEMICAL SOCIETY REVIEWS, 2011, 40 (07) : 3786 - 3801
  • [9] Production of Ni-Doped SiC Nanopowders and their Dielectric Properties
    Li, Dan
    Jin, Hai-Bo
    Cao, Mao-Sheng
    Chen, Tao
    Dou, Yan-Kun
    Wen, Bo
    Agathopoulos, Simeon
    [J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 2011, 94 (05) : 1523 - 1527
  • [10] Large Dielectric Constant and High Thermal Conductivity in Poly(vinylidene fluoride)/Barium Titanate/Silicon Carbide Three-Phase Nanocomposites
    Li, Yong
    Huang, Xingyi
    Hu, Zhiwei
    Jiang, Pingkai
    Li, Shengtao
    Tanaka, Toshikatsu
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (11) : 4396 - 4403