Flexible Nanoscale Memory Device Based on Resistive Switching in Nickel Oxide Thin Film

被引：7
|
作者：
Yu, Q. [1 ]
Lim, W. M. [2 ]
Hu, S. G. [1 ]
Chen, T. P. [2 ]
Deng, L. J. [1 ]
Liu, Y. [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2012年 / 4卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
Nanoscale Memory; Resistive Switching;
D O I：
10.1166/nnl.2012.1398
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of similar to 10(3) between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (10(4) s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability.
引用
收藏
页码：940 / 943
页数：4
相关论文
共 50 条
  • [21] Characteristics of graphene-oxide-based flexible and transparent resistive switching memory
    Wu, Hsiao-Yu
    Lin, Chun-Chieh
    Lin, Chu-Hsuan
    CERAMICS INTERNATIONAL, 2015, 41 : S823 - S828
  • [22] Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite
    Zhao, Enming
    Liu, Shuangqiang
    Liu, Xiaodan
    Wang, Chen
    Liu, Guangyu
    Xing, Chuanxi
    NANO, 2020, 15 (09)
  • [23] Complementary Resistive Switching Observed in Graphene Oxide-Based Memory Device
    Shi, Kaixi
    Wang, Zhongqiang
    Xu, Haiyang
    Xu, Zhe
    Zhang, Xiaohan
    Zhao, Xiaoning
    Liu, Weizhen
    Yang, Guochun
    Liu, Yichun
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (04) : 488 - 491
  • [24] Multilevel resistive switching memory with amorphous InGaZnO-based thin film
    Hsu, Ching-Hui
    Fan, Yang-Shun
    Liu, Po-Tsun
    APPLIED PHYSICS LETTERS, 2013, 102 (06)
  • [25] Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory
    Lee, Jong Ho
    Kim, Gun Hwan
    Ahn, Young Bae
    Park, Ji Woon
    Ryu, Seung Wook
    Hwang, Cheol Seong
    Kim, Hyeong Joon
    APPLIED PHYSICS LETTERS, 2012, 100 (12)
  • [26] Flexible resistive memory device based on agar
    Chang, Yu-Chi
    Liu, Hao-Jung
    Chen, Bo-Jhang
    FLEXIBLE AND PRINTED ELECTRONICS, 2023, 8 (03):
  • [27] Analysis on switching mechanism of graphene oxide resistive memory device
    Hong, Seul Ki
    Kim, Ji Eun
    Kim, Sang Ouk
    Cho, Byung Jin
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)
  • [28] Nonvolatile Memory Device Based on Bipolar and Unipolar Resistive Switching in Bio-Organic Aloe Polysaccharides Thin Film
    Lim, Zhe Xi
    Cheong, Kuan Yew
    ADVANCED MATERIALS TECHNOLOGIES, 2018, 3 (05):
  • [29] Temperature dependence of resistive switching behaviors in resistive random access memory based on graphene oxide film
    Yi, Mingdong
    Cao, Yong
    Ling, Haifeng
    Du, Zhuzhu
    Wang, Laiyuan
    Yang, Tao
    Fan, Quli
    Xie, Linghai
    Huang, Wei
    NANOTECHNOLOGY, 2014, 25 (18)
  • [30] A flexible organic memory device with a clearly disclosed resistive switching mechanism
    Casula, Giulia
    Busby, Yan
    Franquet, Alexis
    Spampinato, Valentina
    Houssiau, Laurent
    Bonfiglio, Annalisa
    Cosseddu, Piero
    ORGANIC ELECTRONICS, 2019, 64 : 209 - 215
12345