Flexible Nanoscale Memory Device Based on Resistive Switching in Nickel Oxide Thin Film

被引：7
|
作者：
Yu, Q. [1 ]
Lim, W. M. [2 ]
Hu, S. G. [1 ]
Chen, T. P. [2 ]
Deng, L. J. [1 ]
Liu, Y. [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
来源：
NANOSCIENCE AND NANOTECHNOLOGY LETTERS | 2012年 / 4卷 / 09期
基金：
新加坡国家研究基金会;
关键词：
Nanoscale Memory; Resistive Switching;
D O I：
10.1166/nnl.2012.1398
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of similar to 10(3) between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (10(4) s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability.
引用
收藏
页码：940 / 943
页数：4
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