Effects of applied power on hydrogenated amorphous carbon (a-C:H) film deposition by low frequency (60 Hz) plasma-enhanced chemical vapor deposition (PECVD)

被引:16
作者
Kim, Hong Tak [1 ]
Sohn, Sang Ho [1 ]
机构
[1] Kyungpook Natl Univ, Dept Phys, Taegu 702701, South Korea
基金
新加坡国家研究基金会;
关键词
Low frequency; 60; Hz; a-C:H; PECVD; Plasma; COATINGS;
D O I
10.1016/j.vacuum.2012.06.007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Hydrogenated amorphous carbon (a-C:H) films were deposited onto glass substrates using low frequency (60 Hz) plasma-enhanced chemical vapor deposition and the effects of the applied power on a-C:H films deposition were investigated. During deposition, the electron temperature and the density of CH4-H-2 plasma were 2.4-3.1 eV and about 10(8) cm(-3), respectively. The main optical emission peak of the carbon species observed in the CH4-H-2 plasma is shown to be excited carbon CH* at 431 nm. The sp(3)/sp(2) ratio, band gap, hydrogen content, and refractive index of a-C:H films gradually increased up to a power of 25 W and then saturated at higher power. This tendency is similar to the variation of plasma parameters with varying applied power, thereby indicating that a strong relationship exists between the properties of the films and the plasma discharge. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2148 / 2151
页数:4
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