Signatures of an extended rigidity percolation in the photo-degradation behavior and the composition dependence of photo-response of Ge-Te-In glasses

被引:8
作者
Manikandan, N. [1 ]
Asokan, S. [1 ]
机构
[1] Indian Inst Sci, Dept Instrumentat, Bangalore 560012, Karnataka, India
关键词
chalcogenides; photoinduced effects; photo-conductivity;
D O I
10.1016/j.jnoncrysol.2008.04.004
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Time dependent photocurrent measurements have been undertaken on bulk Ge15Te85-xInx (1 <= x <= 11) series of glasses. It is found that samples with x < 3 do not exhibit any photo-degradation whereas a decrease in photo-conductivity under illumination is observed in samples with x >= 3. Further, the photosensitivity of Ge15Te85-xInx glasses is found to reveal specific signatures at compositions x = 3 and 7. The observed composition dependent photo-degradation behavior and photo-response of these glasses have been understood on the basis of an extended rigidity percolation and its influence on network related properties. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:3732 / 3734
页数:3
相关论文
共 20 条
[1]   Rigidity transitions in binary Ge-Se glasses and the intermediate phase [J].
Boolchand, P ;
Feng, X ;
Bresser, WJ .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2001, 293 :348-356
[2]  
Boolchand P, 2001, J OPTOELECTRON ADV M, V3, P703
[3]   The effects of composition and heat treatment on the structural and optical properties of Ge15Te85-xCux thin films [J].
Dongol, M ;
Abou Zied, M ;
Gamal, GA ;
El-Denglawey, A .
PHYSICA B-CONDENSED MATTER, 2004, 353 (3-4) :169-175
[4]  
Dongol M., 2000, Egyptian Journal of Solids, V23, P297
[5]   Effect of light soaking on the electrical properties of the Ge0.20Te0.75Bi0.05 glass system [J].
Fadel, M ;
Sedeek, K ;
ElSalam, FA .
THIN SOLID FILMS, 1996, 283 (1-2) :239-242
[6]   Rigidity transitions and molecular structure of AsxSe1-x glasses [J].
Georgiev, DG ;
Boolchand, P ;
Micoulaut, M .
PHYSICAL REVIEW B, 2000, 62 (14) :R9228-R9231
[7]   Absence of photodegradation in amorphous chalcogenide films with a narrow optical bandgap [J].
Hayashi, K ;
Hikida, Y ;
Shimakawa, K ;
Elliott, SR .
PHILOSOPHICAL MAGAZINE LETTERS, 1997, 76 (03) :233-236
[8]   PHOTOCONDUCTIVITY AND DENSITY OF STATES FOR AMORPHOUS GETE [J].
HOWARD, WE ;
TSU, R .
PHYSICAL REVIEW B, 1970, 1 (12) :4709-&
[9]   VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].
KASTNER, M ;
ADLER, D ;
FRITZSCHE, H .
PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507
[10]   ELECTRICAL AND OPTICAL-PROPERTIES OF THE AS-TE-IN AND GE-SE-IN CHALCOGENIDE SYSTEMS [J].
KOSEK, F ;
CIMPL, Z ;
MIKHAILOV, MD ;
KARPOVA, EA .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1986, 86 (03) :265-270