Chemical Control of Semiconductor Nanowire Kinking and Superstructure

被引：60

作者：

Musin, Ildar R. ^{[1
]}

Filler, Michael A. ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA

来源：

NANO LETTERS | 2012年 / 12卷 / 07期

关键词：

Germanium nanowires; crystal structure engineering; vapor-liquid-solid; superstructure; FIELD-EFFECT TRANSISTORS; GERMANIUM NANOWIRES; BUILDING-BLOCKS; SILICON; GROWTH; EPITAXY; DEVICES; STATES; SHAPE;

D O I：

10.1021/nl204065p

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We show that methylgermane (GeH3CH3) can induce a transition from < 111 > to < 110 > oriented growth during the vapor-liquid-solid synthesis of Ge nanowires. This hydride-based chemistry is subsequently leveraged to rationally fabricate kinking superstructures based on combinations of < 111 > and < 110 > segments. The addition of GeH3CH3 also eliminates sidewall tapering and enables Ge nanowire growth at temperatures exceeding 475 degrees C, which greatly expands the process window and opens new avenues to create Si/Ge heterostructures.

引用

页码：3363 / 3368

页数：6

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