Optoelectronic Properties of Density-Controlled ZnO Nanopillar Arrays

被引:21
作者
Chang, Yuan-Ming [1 ]
Huang, Jheng-Ming [3 ]
Lin, Chih-Ming [4 ]
Lee, Hsin-Yi [2 ,5 ]
Chen, San-Yuan [2 ]
Juang, Jenh-Yih [1 ]
机构
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan
[3] Natl Chiao Tung Univ, Program Sci & Technol Accelerator Light Source, Hsinchu 300, Taiwan
[4] Natl Hsinchu Univ Educ, Dept Appl Sci, Hsinchu 300, Taiwan
[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 300, Taiwan
关键词
FIELD-EMISSION PROPERTIES; QUANTUM DOTS; GROWTH; PHOTOLUMINESCENCE; FABRICATION; NANOWIRES; NANORODS; LAYER; TEMPERATURE; EXCITONS;
D O I
10.1021/jp301350h
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
An effective method of controlling the density of ZnO nanopillars (ZnO-NPs) by using the self-assembled silver nanoislands as the growth catalyst is demonstrated. We were able to vary the density of the ZnO-NPs to within the range of similar to 10-30 mu m(-2) by properly manipulating the size distribution of the silver nanoislands partially covering the Si substrates. Continuous silver film can also be used as the catalyst to facilitate the growth of ZnO islands and pillars on Si substrates, albeit with much less control of the resultant density and morphological appearances. The field emission measurements indicate that the performance of field emission for ZnO-NPs can be. improved markedly by reducing the density of the ZnO-NPs. The turn-on field of the low-density ZnO-NPs was as low as 2.39 V/mu m with a corresponding current density of 10 mu A/cm(2) and a field enhancement factor (beta value) of similar to 3500. The enhancement of field emission characteristics is attributed to the much reduced field screen effect by properly controlled density of the ZnO-NPs.
引用
收藏
页码:8332 / 8337
页数:6
相关论文
共 40 条
[1]  
Ahsanulhaq Q., 2007, NANOTECHNOLOGY, V18
[2]   Origin of the optical phonon frequency shifts in ZnO quantum dots [J].
Alim, KA ;
Fonoberov, VA ;
Balandin, AA .
APPLIED PHYSICS LETTERS, 2005, 86 (05) :1-3
[3]   Optical investigations on excitons bound to impurities and dislocations in ZnO [J].
Alves, H ;
Pfisterer, D ;
Zeuner, A ;
Riemann, T ;
Christen, J ;
Hofmann, DM ;
Meyer, BK .
OPTICAL MATERIALS, 2003, 23 (1-2) :33-37
[5]  
Chang Y.-K., 2009, NANOTECHNOLOGY, V20
[6]  
Chang Y.-M., 2012, ACS APPL MA IN PRESS
[7]   Enhanced Free Exciton and Direct Band-Edge Emissions at Room Temperature in Ultrathin ZnO Films Grown on Si Nanopillars by Atomic Layer Deposition [J].
Chang, Yuan-Ming ;
Shieh, Jiann ;
Chu, Pei-Yuan ;
Lee, Hsin-Yi ;
Lin, Chih-Ming ;
Juang, Jenh-Yih .
ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (11) :4415-4419
[8]   Subwavelength Antireflective Si Nanostructures Fabricated by Using the Self-Assembled Silver Metal-Nanomask [J].
Chang, Yuan-Ming ;
Shieh, Jiann ;
Juang, Jenh-Yih .
JOURNAL OF PHYSICAL CHEMISTRY C, 2011, 115 (18) :8983-8987
[9]   Enhanced visible photoluminescence from ultrathin ZnO films grown on Si-nanowires by atomic layer deposition [J].
Chang, Yuan-Ming ;
Jian, Sheng-Rui ;
Lee, Hsin-Yi ;
Lin, Chih-Ming ;
Juang, Jenh-Yih .
NANOTECHNOLOGY, 2010, 21 (38)
[10]  
Chen S.-J., 2005, APPL PHYS LETT, V87