Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

被引：7

作者：

Iechi, Hiroyuki ^{[1
,2
]}

Watanabe, Yasuyuki ^{[3
]}

Yamauchi, Hiroshi ^{[4
]}

Kudo, Kazuhiro ^{[2
]}

机构：

[1] Ricoh Co Ltd, Adv Technol R&D Ctr, Yokohama, Kanagawa 2240035, Japan

[2] Chiba Univ, Grad Sch Engn, Chiba 2638522, Japan

[3] Chiba Univ, Ctr Frontier Sci, Chiba 2638522, Japan

[4] Chiba Univ, Fac Engn, Chiba 2638522, Japan

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2008年 / E91C卷 / 12期

关键词：

pentacene; zinc oxide; sputter; field effect transistor; interface; CMOS inverter; organic logic circuit;

D O I：

10.1093/ietele/e91-c.12.1843

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags. and others.

引用

页码：1843 / 1847

页数：5

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