Characterization of Zinc Oxide and Pentacene Thin Film Transistors for CMOS Inverters

被引：7
|
作者：
Iechi, Hiroyuki [1 ,2 ]
Watanabe, Yasuyuki [3 ]
Yamauchi, Hiroshi [4 ]
Kudo, Kazuhiro [2 ]
机构：
[1] Ricoh Co Ltd, Adv Technol R&D Ctr, Yokohama, Kanagawa 2240035, Japan
[2] Chiba Univ, Grad Sch Engn, Chiba 2638522, Japan
[3] Chiba Univ, Ctr Frontier Sci, Chiba 2638522, Japan
[4] Chiba Univ, Fac Engn, Chiba 2638522, Japan
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 2008年 / E91C卷 / 12期
关键词：
pentacene; zinc oxide; sputter; field effect transistor; interface; CMOS inverter; organic logic circuit;
D O I：
10.1093/ietele/e91-c.12.1843
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We fabricated both thin film transistors (TFTs) and diodes using zinc oxide (ZnO) and pentacene, and investigated their basic characteristics. We found that field-effect mobility is influenced by the interface state between the semiconductor and dielectric layers. Furthermore, the complementary metal oxide semiconductor (CMOS) inverter using a p-channel pentacene field-effect transistor (FET) and an n-channel ZnO FET showed a relatively high voltage gain (8 - 12) by optimizing the device structure. The hybrid complementary inverters described here are expected for application in flexible displays, radio frequency identification cards (RFID) tags. and others.
引用
收藏
页码：1843 / 1847
页数：5
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