High-power GaN-HEMT devices operating at NM-wave frequencies
被引:0
作者:
Jha, AR
论文数: 0引用数: 0
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机构:
Jha Tech Consulting Serv, Cerritos, CA 90703 USAJha Tech Consulting Serv, Cerritos, CA 90703 USA
Jha, AR
[1
]
机构:
[1] Jha Tech Consulting Serv, Cerritos, CA 90703 USA
来源:
IRMMW-THz2005: The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, Vols 1 and 2
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2005年