Silicon bump arrays by near-field enhanced femtosecond laser irradiation in fluorine liquid precursors

被引:4
|
作者
Ulmeanu, M. [1 ]
Anghel, I. [1 ,2 ]
Jipa, F. [1 ]
Filipescu, M. [1 ]
Enculescu, M. [3 ]
Zamfirescu, M. [1 ]
机构
[1] Natl Inst Laser Plasma & Radiat Phys, Laser Dept, Magurele 077125, Romania
[2] Univ Bucharest, Fac Phys, Magurele 077125, Romania
[3] Natl Inst Mat Phys, Magurele 077125, Romania
关键词
Silicon bump array; Near-field enhacement; Femtosecond laser; Liquid precursor; MECHANISM;
D O I
10.1016/j.apsusc.2013.01.050
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A simple approach to fabricate periodic arrays of conical bumps on silicon (Si) substrate is reported. In the process, a single pulse from a 200 fs laser at 387 nm wavelength was applied on a self-assembled monolayer of 700 nm and 390 nm diameter silica spheres on a n-doped Si (1 0 0) wafer. The surface was irradiated at normal incidence by immersing the silicon substrates in a glass container filled with 1, 1, 2 trichlor-trifluorethan liquid precursors. After laser irradiation, at laser fluences in the range from 1 to 40 J/cm(2), a regular array of conical Si bumps was fabricated. The density of the Si bumps can be varied by varying the particle size diameter. The influence of the medium on the near-field interactions for both sizes silica particles layer is investigated. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:301 / 304
页数:4
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