Large signal frequency dispersion of AlGaN GaN heterostructure field effect transistors

被引：98

作者：

Kohn, E ^{[1
]}

Daumiller, I

Schmid, P

Nguyen, NX

Nguyen, CN

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, Ulm, Germany

[2] HRL Labs, LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 12期

关键词：

D O I：

10.1049/el:19990697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microwave AlGaN/GaN MODFET power devices have been analysed with respect to their frequency dispersion in terms of transconductance, gate capacitance and large signal output current swing. A electrical equivalent circuit model consistent with all experimental findings, based on the incorporation of a lossy dielectric layer, is presented. It may also enable an interpretation to be made of the RF power compression observed in these devices.

引用

页码：1022 / 1024

页数：3

共 6 条

[1] High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor [J].

Chen, Q ;

Yang, JW ;

Gaska, R ;

Khan, MA ;

Shur, MS ;

Sullivan, GJ ;

Sailor, AL ;

Higgings, JA ;

Ping, AT ;

Adesida, I .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (02) :44-46

[2]

CHU KK, 1998, P ELECTROCHEM SOC, V12

[3]

Lipka KM, 1995, PROCEEDINGS: IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, P542, DOI 10.1109/CORNEL.1995.482551

[4] Device characteristics of scaled GaN/AlGaN MODFETs [J].

Nguyen, NX ;

Nguyen, C ;

Grider, DE .

ELECTRONICS LETTERS, 1998, 34 (08) :811-812

[5] Direct measurement of gate depletion in high breakdown (405V) AlGaN/GaN heterostructure field effect transistors [J].

Vetury, R ;

Wu, YF ;

Fini, PT ;

Parish, G ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :55-58

[6] High Al-content AlGaN/GaN MODFET's for ultrahigh performance [J].

Wu, YF ;

Keller, BP ;

Fini, P ;

Keller, S ;

Jenkins, TJ ;

Kehias, LT ;

Denbaars, SP ;

Mishra, UK .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (02) :50-53

← 1 →