Large signal frequency dispersion of AlGaN GaN heterostructure field effect transistors

被引：99

作者：

Kohn, E ^{[1
]}

Daumiller, I

Schmid, P

Nguyen, NX

Nguyen, CN

机构：

[1] Univ Ulm, Dept Electron Devices & Circuits, Ulm, Germany

[2] HRL Labs, LLC, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 12期

关键词：

D O I：

10.1049/el:19990697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Microwave AlGaN/GaN MODFET power devices have been analysed with respect to their frequency dispersion in terms of transconductance, gate capacitance and large signal output current swing. A electrical equivalent circuit model consistent with all experimental findings, based on the incorporation of a lossy dielectric layer, is presented. It may also enable an interpretation to be made of the RF power compression observed in these devices.

引用

页码：1022 / 1024

页数：3

共 6 条

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