Control of Grain in Cu(In,Ga)Se2 Thin Films Prepared by Selenization Method Using Diethylselenide

被引：3
|
作者：
Uchikoshi, Masaki [1 ]
Shirakata, Sho [1 ]
机构：
[1] Ehime Univ, Fac Engn, Matsuyama, Ehime 7908577, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期
关键词：
LESS-HAZARDOUS SOURCE; METAL PRECURSORS; SOLAR-CELLS; SE; ABSORBERS;
D O I：
10.1143/JJAP.51.10NC20
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The relationship between the selenization condition and the grain structure has been studied. A single-phase chalcopyrite Cu(In,Ga)Se-2 thin film with densely-packed grains and large grains have been prepared by the two-step selenization of the In/Cu-Ga bilayer precursor using diethylselenide (DESe). The formation of the In-Se compound in the early stage of the first-step selenization (T = 350-450 degrees C) has been found to be important. The succeeding second-step selenization at high temperature of 540 degrees C led to the well developed (112) grain formation. The relationship between the selenization condition and the CIGS film structure is discussed with relation to the selenization mechanism. (C) 2012 The Japan Society of Applied Physics
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页数：4
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