First principles study of 3d transition metal doped Cu3N

被引:43
作者
Cui, X. Y. [1 ,2 ]
Soon, A. [1 ,3 ]
Phillips, A. E. [1 ]
Zheng, R. K. [2 ]
Liu, Z. W. [2 ]
Delley, B. [4 ]
Ringer, S. P. [2 ]
Stampfl, C. [1 ]
机构
[1] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia
[2] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia
[3] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[4] Paul Scherrer Inst, WHGA 123, CH-5232 Villigen, Switzerland
基金
澳大利亚研究理事会;
关键词
Density functional theory; Formation energy; Magnetism; NITRIDE THIN-FILMS; COPPER-NITRIDE; ELECTRONIC-STRUCTURE; STABILITY; GROWTH;
D O I
10.1016/j.jmmm.2012.05.021
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Interstitially doped Cu3N represents a model system to study "enclosed atoms" in a cuboctahedral environment. Based on density functional theory calculations using the generalized gradient approximation, we report a systematic study of 3d-transition metals (TM), as well as Li-, H-, and Pd-doped Cu3N, whose stabilities and magnetic properties are investigated. The interposition of 3d-TM atoms leads to mechanically stable yet brittle structures, with Sc, Mn, Ni, Cu, Zn possessing relatively small positive (endothermic) formation energies (0.12 similar to 0.54 eV/TM), suggesting it may be easier to realize them experimentally than other 3d-TM elements. Li-, H-, Pd-doping in Cu3N are exothermic, while Ti, V, Cr, Fe, and Co have higher formation energy (0.93 similar to 1.39 eV/TM) at a doping concentration 3.7 %. The fully 3d-TM doped Cu3N systems exhibit a wide spectrum of magnetic properties, ranging from weak antiferromagnetic (Sc-), antiferromagnetic (Ti-, V-, Cr-) to ferromagnetic (Mn-, Fe-, Co-) and non-magnetic (Ni-, Cu-, Zn-) behaviour. In particular, Ti : Cu3N exhibits weak itinerant magnetic properties with a large positive magnetovolume effect. All the 3d-TM atom intercalations into cubic Cu3N lead to a semiconductor-to-metal transition for both 100% and 3.7% doping, with the exception of Ni : Cu3N exhibiting a weak metallic or narrow semiconducting behaviour depending on the doping concentration. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码:3138 / 3143
页数:6
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