Field emission from nanostructure carbon films

被引：1

作者：

Lim, SH ^{[1
]}

Kim, HS

Jang, J

Lee, CH

机构：

[1] Kyung Hee Univ, Dept Informat Display, Dongdaemoon Ku, Seoul 130701, South Korea

[2] Kyung Hee Univ, Dept Phys, Dongdaemoon Ku, Seoul 130701, South Korea

[3] Wonkwang Univ, Div Phys & Semicond Sci, Iksan 570749, South Korea

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2002年 / 16卷 / 6-7期

关键词：

D O I：

10.1142/S0217979202010725

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the field emission properties of carbon nanostructure, which comprised of high density carbon nanotips on Si. These carbon nanotips are grown on metal coated Si by a high density plasma chemical vapor deposition (HDPCVD) using an inductively coupled plasma. The emission current increases with increasing the growth temperature, They exhibited an emission current density of I mA/cm(2) at a field of 1.95 V/mum when the growth temperature was 700 degreesC. We developed high brightness field emission lamps using the carbon nanotips.

引用

页码：983 / 987

页数：5

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