Two-phonon scattering in graphene in the quantum Hall regime

被引：3

作者：

Alexeev, A. M. ^{[1
]}

Hartmann, R. R. ^{[2
]}

Portnoi, M. E. ^{[1
,3
]}

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] De La Salle Univ, Manila 1004, Philippines

[3] Univ Fed Rio Grande do Norte, Int Inst Phys, BR-59072970 Natal, RN, Brazil

来源：

PHYSICAL REVIEW B | 2015年 / 92卷 / 19期

基金：

欧盟地平线“2020”;

关键词：

STRONG MAGNETIC-FIELD; ACTIVATED CONDUCTIVITY; RESISTANCE STANDARD; BORON-NITRIDE; GRAPHITE; ELECTRONS; FILMS;

D O I：

10.1103/PhysRevB.92.195431

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

One of the most distinctive features of graphene is its huge inter-Landau-level splitting in experimentally attainable magnetic fields which results in the room-temperature quantum Hall effect. In this paper we calculate the longitudinal conductivity induced by two-phonon scattering in graphene in a quantizing magnetic field at elevated temperatures. It is concluded that the purely phonon-induced scattering, negligible for conventional semiconductor heterostructures under quantum Hall conditions, becomes comparable to the disorder-induced contribution to the dissipative conductivity of graphene in the quantum Hall regime.

引用

页数：6

共 46 条

[1] Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
Alexander-Webber, J. A.
Baker, A. M. R.
Janssen, T. J. B. M.
Tzalenchuk, A.
Lara-Avila, S.
Kubatkin, S.
Yakimova, R.
Piot, B. A.
Maude, D. K.
Nicholas, R. J.
[J]. PHYSICAL REVIEW LETTERS, 2013, 111 (09)
[2] Tuning gaps and phases of a two-subband system in a quantizing magnetic field
Apalkov, VM
Portnoi, ME
[J]. PHYSICAL REVIEW B, 2002, 65 (12) : 1253101 - 1253106
[3] Apalkov VM, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.121303
[4] Two-subband system in quantizing magnetic field: probing many-body gap by non-equilibrium phonons
Apalkov, VM
Portnoi, ME
[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 15 (03) : 202 - 210
[5] Temperature-dependent transport in suspended graphene
Bolotin, K. I.
Sikes, K. J.
Hone, J.
Stormer, H. L.
Kim, P.
[J]. PHYSICAL REVIEW LETTERS, 2008, 101 (09)
[6] BYCHKOV YA, 1981, JETP LETT+, V34, P473
[7] Limits on Charge Carrier Mobility in Suspended Graphene due to Flexural Phonons
Castro, Eduardo V.
Ochoa, H.
Katsnelson, M. I.
Gorbachev, R. V.
Elias, D. C.
Novoselov, K. S.
Geim, A. K.
Guinea, F.
[J]. PHYSICAL REVIEW LETTERS, 2010, 105 (26)
[8] The electronic properties of graphene
Castro Neto, A. H.
Guinea, F.
Peres, N. M. R.
Novoselov, K. S.
Geim, A. K.
[J]. REVIEWS OF MODERN PHYSICS, 2009, 81 (01) : 109 - 162
[9] Intrinsic and extrinsic performance limits of graphene devices on SiO2
Chen, Jian-Hao
Jang, Chaun
Xiao, Shudong
Ishigami, Masa
Fuhrer, Michael S.
[J]. NATURE NANOTECHNOLOGY, 2008, 3 (04) : 206 - 209
[10] EXPERIMENTAL TESTS OF FRACTIONAL QUANTUM HALL-EFFECT THEORY
CLARK, RG
MALLETT, JR
USHER, A
SUCKLING, AM
NICHOLAS, RJ
HAYNES, SR
JOURNAUX, Y
HARRIS, JJ
FOXON, CT
[J]. SURFACE SCIENCE, 1988, 196 (1-3) : 219 - 235

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