Line Edge Roughness Frequency Analysis for SAQP process

被引：17

作者：

Sun, Lei ^{[1
]}

Zhang, Xiaoxiao ^{[2
]}

Levi, Shimon ^{[3
]}

Ge, Adam ^{[4
]}

Zhou, Hua ^{[4
]}

Wang, Wenhui ^{[1
]}

Krishnan, Navaneetha ^{[4
]}

Chen, Yulu ^{[1
]}

Verduijn, Erik ^{[1
]}

Kim, Ryoung-han ^{[1
]}

机构：

[1] GLOBALFOUNDRIES, 257 Fuller Rd, Albany, NY 12203 USA

[2] GLOBALFOUNDRIES, 400 Stone Break Rd Extens, Malta, NY 12020 USA

[3] Appl Mat Inc, 9 Oppenheimer St, IL-76705 Rehovot, Israel

[4] Appl Mat Inc, 2911 Route 9 Suite 3, Malta, NY 12020 USA

来源：

OPTICAL MICROLITHOGRAPHY XXIX | 2016年 / 9780卷

关键词：

Line edge roughness; line width roughness; power spectral density; lithography; wiggling; wiggling factor;

D O I：

10.1117/12.2229176

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The line edge roughness (LER) and line width roughness (LWR) transfer in a self-aligned quadruple patterning (SAQP) process is shown for the first time. Three LER characterization methods, including conventional standard deviation method, power spectral density (PSD) method and frequency domain 3-sigma method, are used in the analysis. The wiggling is also quantitatively characterized for each SAQP step with a wiggling factor. This work will benefit both process optimization and process monitoring.

引用

页数：6

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