Phonon Confinement in Nanostructured InP

被引：12

作者：

Bouarissa, Nadir ^{[1
,2
]}

机构：

[1] Najran Univ, Coll Arts & Sci, Dept Phys, Najran 11001, Saudi Arabia

[2] Najran Univ, CAMNR, Najran 11001, Saudi Arabia

来源：

JOURNAL OF COMPUTATIONAL AND THEORETICAL NANOSCIENCE | 2013年 / 10卷 / 05期

关键词：

Lattice-Vibration; Confinement Effect; Nanostructures; InP; RAMAN-SCATTERING; SIZE DEPENDENCE; ENERGY-GAP; BAND-GAPS; SEMICONDUCTORS; PARAMETERS; DISPERSION; ELECTRON; SYSTEMS; DOTS;

D O I：

10.1166/jctn.2013.2844

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We calculated size-dependent quantum well lattice-vibration properties for a semiconductor nanostructured InP, within the framework of the pseudopotential approach. Computed results on energy band gap, dielectric constant, and phonon frequencies from our investigations showed that noticeable differences relative to the bulk values are seen only when the quantum well size is smaller than about 9 nm. A parametrization of the energy gap and phonon frequencies versus quantum well size is provided. The information gathered by the present study may be useful for obtaining derived lattice vibration properties that were not possible in bulk InP.

引用

页码：1284 / 1289

页数：6

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