Extrinsic parameter extraction and RF modelling of CMOS

被引：6
|
作者：
Alam, MS [1 ]
Armstrong, GA [1 ]
机构：
[1] Queens Univ Belfast, Sch Elect & Elect Engn, Belfast BT9 5AH, Antrim, North Ireland
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 05期
关键词：
RF CMOS; parameter extraction; non-linear modelling;
D O I：
10.1016/j.sse.2003.09.012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical approach for CMOS parameter extraction which includes the effect of parasitic resistance is presented. The method is based on small-signal equivalent circuit valid in all region of operation to uniquely extract extrinsic resistances, which can be used to extend the industry standard BSIM3v3 MOSFET model for radio frequency applications. The verification of the model was carried out through frequency domain measurements of S-parameters and direct time domain measurement at 2.4 GHz in a large signal non-linear mode of operation. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：669 / 674
页数：6
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