GaN/AlN multiple quantum wells grown on GaN-AlN waveguide structure by metalorganic vapor-phase epitaxy

被引:3
作者
Kumtornkittikul, C
Sugiyama, M
Nakano, Y
机构
[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan
[2] Univ Tokyo, Dept Elect Engn, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan
[3] Japan Sci & Technol Agcy, Solut Oriented Res Sci & Technol, Kawaguchi, Saitama 3320012, Japan
关键词
inter-sub-band transition; all-optical switch; AlN; GaN; multiple quantum wells (MQW); metalorganic vapor-phase epitaxy (MOVPE); waveguide; built-in electric field;
D O I
10.1007/s11664-006-0132-y
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-optical-confinement waveguide structure based on nitride semiconductors is proposed and demonstrated for the first time with metal organic vapor-phase epitaxy. The waveguide structure composed of 1-mu m-thick AlN cladding layer, 2-mu m-thick GaN guiding layer, and 40 periods of GaN/AlN multiple quantum wells (MQWs) was grown using optimized growth conditions for each layer. For improved material quality, the two-step growth technique using low-temperature AlN and GaN nucleation layers was utilized to reduce the stress induced by lattice mismatch between each layer. The high-optical-confinement structure could therefore be grown with high quality, leading to a successful observation of inter-sub-band absorption in GaN/AlN MQWs. The inter-sub-band absorption wavelength observed in such structure is in good agreement with that of MQWs grown on GaN layer, showing that the proposed waveguide structure can be used as a standard structure for optical devices based on inter-sub-band absorption.
引用
收藏
页码:744 / 749
页数:6
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