A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules

被引：32
作者：
An, Ning [1 ]
Du, Mingxing [1 ]
Hu, Zhen [2 ]
Wei, Kexin [1 ]
机构：
[1] Tianjin Univ Technol, Tianjin Key Lab Control Theory & Applicat Complic, Tianjin 300384, Peoples R China
[2] Tianjin Univ, Sch Elect Engn & Automat, Tianjin 300072, Peoples R China
来源：
ENERGIES | 2018年 / 11卷 / 03期
基金：
国家重点研发计划;
关键词：
insulated gate bipolar transistor (IGBT); thermal network; parameter identification; junction temperature; ELECTROTHERMAL SIMULATION; DEVICES; SYSTEMS; SOLDER;
D O I：
10.3390/en11030595
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
This paper proposes a novel method for optimizing the Cauer-type thermal network model considering both the temperature influence on the extraction of parameters and the errors caused by the physical structure. In terms of prediction of the transient junction temperature and the steady-state junction temperature, the conventional Cauer-type parameters are modified, and the general method for estimating junction temperature is studied by using the adaptive thermal network model. The results show that junction temperature estimated by our adaptive Cauer-type thermal network model is more accurate than that of the conventional model.
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页数：16
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