High quality nitrogen-doped zinc oxide thin films grown on ITO by sol-gel method

Highly transparent N-doped ZnO thin films were deposited on lTO coated corning glass substrate by solgel method. Ammonium nitrate was used as a dopant source of N with varying the doping concentration 0, 0.5, 1.0, 2.0 and 3.0 at%. The DSC analysis of prepared NZO sols is observed a phase transition at 150 degrees C. X-ray diffraction pattern showed the preferred (002) peak of ZnO, which was deteriorated with increased N concentrations. The transmittance of NZO thin films was observed to be similar to 88%. The bandgap of NZO thin films increased from 3.28 to 3.70 eV with increased N concentration from 0 to 3 at%. The maximum carrier concentration 8.36 x 10(17) cm(-3) and minimum resistivity 1.64 SI cm was observed for 3 at% N doped ZnO thin films deposited on glass substrate. These highly transparent ZnO thin films can be used as a winclovv layer in solar cells and optoelectronic devices. (C) 2015 Elsevier BM. All rights reserved