The collision frequency model of the solid state plasma for Si/Si1-xGex/Si SPiN device

被引：4

作者：

Kang, H. Y. ^{[1
]}

Hu, H. Y. ^{[1
]}

Wang, B. ^{[1
]}

Zhang, H. M. ^{[1
]}

Su, H. ^{[1
]}

Hao, M. R. ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2017年 / 249卷

基金：

中国国家自然科学基金;

关键词：

Solid state plasma; Collision frequency; Heterojunctions; SIMULATION; MOBILITY;

D O I：

10.1016/j.ssc.2016.11.001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A two dimensional(2D) collision frequency model is developed based on the 2D solid state plasma concentration distribution model and mobility model for a heterogeneous Si/Si1-xGex/Si structure SPiN(Surface PiN) devices, which are the basic radiating elements in the reconfigurable solid state plasma antenna. The lower collision frequency can be achieved when the Ge mole fraction x and applied voltage increase at the temperature T=300 K, and that the basically uniform distribution of collision frequency can be obtained for Ge mole fraction x=0.3. Moreover, radiation efficiency and the maximum gain of the antenna for the different collision frequency have also been studied. The proposed model can be a handful for the designing of the solid state plasma antenna.

引用

页码：48 / 53

页数：6

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