Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

被引：103

作者：

Gao, Na ^{[1
]}

Huang, Kai ^{[1
]}

Li, Jinchai ^{[1
]}

Li, Shuping ^{[1
]}

Yang, Xu ^{[1
]}

Kang, Junyong ^{[1
]}

机构：

[1] Xiamen Univ, Dept Phys, Fujian Prov Key Lab Semicond Mat & Applicat, Xiamen 361005, Peoples R China

来源：

SCIENTIFIC REPORTS | 2012年 / 2卷

基金：

中国国家自然科学基金;

关键词：

EXTRACTION EFFICIENCY; SPONTANEOUS EMISSION; NITRIDE; SPECTROSCOPY; POWER;

D O I：

10.1038/srep00816

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

We report the development of complete structural AlGaN-based deep-ultraviolet light-emitting diodes with an aluminum thin layer for increasing light extraction efficiency. A 217% enhancement in peak photoluminescence intensity at 294 nmis observed. Cathodoluminescence measurement demonstrates that the internal quantum efficiency of the deep-UV LEDs coated with Al layer is not enhanced. The emission enhancement of deep-UV LEDs is attributed to the higher LEE by the surface plasmon-transverse magnetic wave coupling. When the proportion of the TM wave to the Al layer increases with the Al content in the AlxGa1-xN multiple quantum wells, i.e., the band edge emission energy, the enhancement ratio of the Al-coated deep-UV LEDs increases.

引用

页数：6

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