High mobility Indium Gallium Zinc Oxide for transparent conductive contacts and thin film transistors

被引：1

作者：

Suresh, Arun ^{[1
]}

Wellenius, Patrick ^{[1
]}

Muth, John F. ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA

来源：

2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/LEOS.2007.4382313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin amorphous films of high electron mobility, optically transparent Indium Gallium Zinc Oxide (IGZO) were deposited by pulsed laser deposition. Electrical conductivity was controlled allowing high performance, optically transparent thin film transistors to be fabricated.

引用

页码：135 / 136

页数：2

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