Radiative recombination kinetics in electroluminescent spin cast pristine α-4T

被引：1
作者：
Ben Hamed, Zied [1 ]
Kouki, Faycal [1 ,2 ]
Bouchriha, Habib [1 ]
Mejatty, Mohamed [1 ]
机构：
[1] Univ Tunis El Manar, Fac Sci Tunis, Lab Mat Avances & Phenomenes Quant, Campus Univ, Tunis 2092, Tunisia
[2] Univ Tunis El Manar, Inst Preparatoire Etud Ingenieur El Manar, Campus Univ, Tunis 2092, Tunisia
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2016年 / 97卷
关键词：
a-4T; Spin coating; Fluorescence; Exciton; Kinetics; THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; INDIUM-TIN-OXIDE; CONDUCTION MECHANISM; QUATERTHIOPHENE; POLYMER; FIELD; OLIGOTHIOPHENES; DERIVATIVES; MOBILITY;
D O I：
10.1016/j.spmi.2016.07.019
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Many experimental studies have established the substantial impact of the sound structure of the organic thin films on optoelectronic device performances. This study is a collection of experimental and theoretical investigation of the radiative recombination kinetics in an organic light emitting diode based on spin cast alpha-4T: The structural properties of the organic thin films (alpha-4T) deposited by the spin coating technique are discussed. The electrical characterization of the diode-like samples (ITO/alpha-4T/AI) have revealed a very low effective mobility of charge carriers in the spin cast alpha-4Tand the radiative recombination current was extracted. The luminescence-current characterization of the diode-like samples (ITO/alpha-4T/AI) was investigated and modeled. (C) 2016 Elsevier Ltd. All rights reserved.
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收藏
页码：463 / 476
页数：14
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