Enhancement of surface decomposition using supersonic beam: direct evidence from GaN quantum dot formations on AlGaN surfaces in gas-source molecular beam epitaxy

被引：1

作者：

Shen, XQ ^{[1
]}

Tanaka, S ^{[1
]}

Iwai, S ^{[1
]}

Aoyagi, Y ^{[1
]}

机构：

[1] Inst Phys & Chem Res RIKEN, Semicond Lab, Wako, Saitama 3510198, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

GaN dots; supersonic beam; surface decomposition; two-dimensional (2D) growth; three-dimensional (3D) growth;

D O I：

10.1016/S0022-0248(98)01362-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The enhancement effect of surface decomposition using supersonic beam was found for the first time, in the fabrication of GaN quantum dots on AlGaN/6H-SiC(0 0 0 1) surfaces by gas-source molecular beam epitaxy. GaN quantum dots were successfully fabricated using Si which was supplied by supersonic beam of CH3SiH3, while the GaN dots could not be formed using usual beam of CH3SiH3. The optical properties of the fabricated GaN quantum dots were investigated by photoluminescence measurements. The advantage by using supersonic beam technique in the enhancement of surface reaction was demonstrated. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：402 / 406

页数：5

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